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This Government Contract opportunity from Department Of Commerce was posted on May 18, 2026. The submission period has ended. Browse the details below for market research, or find similar active opportunities.

Supply of Low-Temperature Anodic Bonding Glass Wafers

Closed
Federal

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The contract involves the manufacture and supply of precision glass wafers designed for anodic bonding at temperatures below 250°C. These wafers must feature thermal expansion properties closely matched to silicon within ±20 ppm to ensure compatibility during bonding processes. Specifications include 4-inch diameter wafers that are 0.7 mm thick and polished to a high precision standard, suitable for advanced manufacturing applications. Issued by the Department of Commerce's National Institute of Standards and Technology (NIST), the subcontract seeks suppliers capable of meeting these stringent technical requirements. The work is to be performed in Boulder, with a response deadline set for June 1, 2026. The procurement falls under NAICS code 326199, indicating its association with the manufacturing of other plastics products, reflecting the specialized nature of the glass wafer fabrication. This opportunity is targeted towards vendors who can deliver high-quality, reliable materials critical for semiconductor and microelectronics applications.

General Info

Supply 4-inch precision glass wafers, thermal expansion ±20 ppm, for anodic bonding below 250°C.

Agency

Department Of Commerce Nist

NAICS

326199 - All Other Plastics Product Manufacturing View NAICS

Place of Performance

Boulder, CO, 80305, USA

Set-Aside

NONE

Documents

(0)

No documents available

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Timeline

PhaseClosed
Posted

subcontract

Response Deadline

Deadline has passed

Submission Closed

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Organization & Contact Information

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AgencyDepartment Of Commerce Nist
ContactsNo contacts available
OfficeN/A
Organization / Agency
Department Of Commerce Nist
Office AddressN/A
ContactsNo contact information available

Full Description

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Manufacture and supply of precision glass wafers for anodic bonding below 250°C with thermal expansion matched to silicon (±20 ppm), including 4-inch diameter, 0.7 mm thick polished wafers.