CHIPS R&D: Laser and Optical Parametric Amplifiers for Multiphoton Microscopy, GCPN 2.01-LP01

The Department of Commerce is seeking the procurement of one laser and two Optical Parametric Amplifiers to support the NIST Nanoscale Device Characterization Division and the CHIPS Metrology Program. This equipment is essential for advancing microelectronics manufacturing through the development of 3D thermal imaging metrology for semiconductor materials. The system must be capable of generating ultrashort, intense infrared pulses to provide necessary lateral and depth resolution via nonlinear absorption. Technical specifications require the laser to have a center frequency of 1035 nm, an average power of at least 40 W, and pulse energy of 80 uJ at 500 kHz with a pulse duration of 300 fs or less. The first OPA must support signal tuning from 1450 to 1900 nm and idler tuning from 2200 to 3200 nm, while the second OPA requires signal tuning from 650 to 880 nm and SHG output from 320 to 505 nm. All equipment must be delivered to Gaithersburg, Maryland, within 20 weeks after receipt of order.