This Solicitation opportunity from Department Of Commerce was posted on May 6, 2026. The submission period has ended. Browse the details below for market research, or find similar active opportunities.
Silicon and Silicon/Germanium Epitaxial Wafers
Contract Overview
Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.
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The contract solicits bids for the supply of silicon and silicon/germanium epitaxial wafers, specifically requiring wafers with a substrate diameter of 100 mm. The government does not specify the production method for the wafers; vendors may use Chemical Vapor Deposition (CVD), Molecular Beam Epitaxy (MBE), or any other method, as long as the final products meet all specifications including thickness, composition, and coherency. For silicon-germanium films, a new minimum composition tolerance of ±5 atomic percent has been added, allowing some variation in the SiGe ratio while still meeting contract requirements. This solicitation is a total small business set-aside under NAICS code 334413 and is managed by the Department of Commerce's National Institute of Standards and Technology (NIST) in Gaithersburg, Maryland. The solicitation was posted on May 6, 2026, with a response deadline of May 12, 2026. Amendments to the solicitation address public questions without making additional changes. Interested parties can contact Erik Frycklund for further information, and all contractual activities are conducted under the oversight of the Department of Commerce.
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MDSet-Aside
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Submission Closed
Organization & Contact Information
Full Description
This solicitation is being amended again to answer public questions raised. The questions and the NIST response have been addressed as an updated attachment.
No additonal changes have been made.
This solicitation is being amended to answer public questions raised and to update a minimum specification.
Question 1: For line items 1-7, could you please confirm the substrate diameter?
Answer 1: The substrate diameter is 100 mm.
Question 2: What is the preferred method of growth (1) CVD (Chemical Vapor Deposition) or (2) MBE (Molecular Beam Epitaxy).
Answer 2: (B) The government is not specifying the production method and any production method that yields wafers meeting all specifications including thickness, composition, and coherency would be acceptable. Vendors may elect to use different growth methods for different film stacks (e.g. MBE for thin stacks, and CVD for thick films).
Minimum specification addition: For SiGe films, the composition tolerance is 5 atomic percent. For example Si0.70Ge0.30 means Si0.70±0.05Ge0.30±0.05, and a film with a composition of Si0.67Ge0.33 would be within specification for a nominal Si0.70Ge0.30 requirement.
No additional changes have been made.
Please see attached document.
