This Solicitation opportunity from Department Of Commerce was posted on May 6, 2026. The submission period has ended. Browse the details below for market research, or find similar active opportunities.
Silicon and Silicon/Germanium Epitaxial Wafers
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This solicitation seeks the procurement of silicon and silicon/germanium epitaxial wafers from small businesses under a total small business set-aside, with NAICS code 334413 and solicitation number 1333ND26QNB030152, issued by NIST under the U.S. Department of Commerce. The wafers must be fabricated to precise specifications, including 100 mm diameter substrates and specific layer structures such as alternating 10 nm Si and Si0.70Ge0.30 films with boron doping, with a composition tolerance of ±0.05 atomic percent for SiGe layers. The government does not mandate a specific growth method, allowing vendors to use either CVD or MBE based on the film stack requirements, as long as all technical criteria are met. Deliverables include 15 wafers per base line item, with optional line items for additional specifications, all due 20 weeks after contract award, and the contract operates under F.O.B. Destination terms requiring delivery to NIST’s facility in Gaithersburg, Maryland during business hours after prior coordination. The evaluation process follows a lowest price, technically acceptable (LPTA) model where quotes must first meet all technical requirements—verified through XRR, HR-XRD, SIMS, and SRP testing—as a pass/fail threshold before price becomes the determining factor. Contract administration requires electronic invoicing via NIST’s designated platforms, either INVOICE@NIST.GOV or the Treasury’s IPP system, and compliance with numerous FAR clauses including those on whistleblower rights, anti-trafficking, Buy American, and subcontracting restrictions, all of which include deviations effective January 2026. Offerors must maintain an active UEI in SAM.gov and represent size status post-award, while the contractor is obligated to indemnify the government against intellectual property claims and allow record access by the Comptroller General for audit purposes. There are no prescribed packaging, preservation, marking, or barcoding standards beyond alignment with carrier requirements, and the contract explicitly excludes military specifications, operating instead under FAR Part 12 for commercial items.
General Info
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NAICS
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MDSet-Aside
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Submission Closed
Organization & Contact Information
Full Description
This solicitation is being amended again to answer public questions raised. The questions and the NIST response have been addressed as an updated attachment.
No additonal changes have been made.
This solicitation is being amended to answer public questions raised and to update a minimum specification.
Question 1: For line items 1-7, could you please confirm the substrate diameter?
Answer 1: The substrate diameter is 100 mm.
Question 2: What is the preferred method of growth (1) CVD (Chemical Vapor Deposition) or (2) MBE (Molecular Beam Epitaxy).
Answer 2: (B) The government is not specifying the production method and any production method that yields wafers meeting all specifications including thickness, composition, and coherency would be acceptable. Vendors may elect to use different growth methods for different film stacks (e.g. MBE for thin stacks, and CVD for thick films).
Minimum specification addition: For SiGe films, the composition tolerance is 5 atomic percent. For example Si0.70Ge0.30 means Si0.70±0.05Ge0.30±0.05, and a film with a composition of Si0.67Ge0.33 would be within specification for a nominal Si0.70Ge0.30 requirement.
No additional changes have been made.
Please see attached document.
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