This Combined Synopsis/Solicitation opportunity was posted on January 18, 2017. The submission period has ended. Browse the details below for market research, or find similar active opportunities.

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4H SiC HPSI Wafer

Awarded

NNX1761284QFederal

Submission Closed01/25/2017, 09:00:00 PM UTC

Contract Overview

Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.

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NAICS: 334413

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POSTED

1 day ago

DEADLINE

in 20 days

AI Contract Overview

Quote Number 19303, under solicitation NNX1761284Q, specifies the procurement of nine high-purity semi-insulating research grade 4H-SiC wafers. Each wafer must be 3 inches in diameter, 8 degrees off-axis, with a resistivity greater than 1E5 ohm-cm and both sides polished with a CMP finish on the silicon face. The order is divided into three sets of three wafers, featuring different epilayer specifications: one set with a 3.0 micron thick n-type epilayer, one set with a 5.0 micron thick n-type epilayer, and one set with a 5.0 micron thick p-type epilayer. The contract requires SIMS analysis of the epilayers and mandates delivery within eight weeks of receiving the purchase order. This is a total small business set-aside under NAICS code 334413, with the place of performance located in Cleveland, Ohio. The procurement process was managed by Jonah L. Berry, with a response deadline set for January 25, 2017.

General Info

Agency

N/A

Contract Value

$47,919

NAICS

334413 - Semiconductor and Related Device Manufacturing

Place of Performance

NASA / Glenn Research Center, CLEVELAND, OH, 44135-3127, USA

Set-Aside

SBA

Awardee

WOLFSPEED INC

Award Issued Date

02/08/2017, 12:00:00 AM UTC

Documents

No documents available

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Timeline

PhaseAwarded

PostedJan 18

Combined Synopsis

AwardedFeb 8

Contract was awarded

Submission Closed

01/25/2017, 09:00:00 PM UTC

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Organization & Contact Information

AgencyN/A

Contacts1 person available

OfficeN/A

Organization / Agency

N/A

Office AddressN/A

Contacts

Jonah L. Berry

contact@example.gov

+1 (555) 000-0000

Full Description

Specification for 4H-SiC (Quote Number 19303) The SiC wafers shall have the following specifications: 1. Three 4H-SiC, high-purity semi-insulating, research grade, 3" dia., 8 off-axis, > 1E5 ohm-cm, both sides polished/silicon face with CMP finish. One n-type, > 1 x 1019 cm-3 epilayer of 3.0 ?m thick. 2. Three 4H-SiC, high-purity semi-insulating, research grade, 3" dia., 8 off-axis, > 1E5 ohm-cm, both sides polished/silicon face with CMP finish. One n-type, > 1 x 1019 cm-3 epilayer of 5.0 ?m thick. 3. Three 4H-SiC, high-purity semi-insulating, research grade, 3" dia., 8 off-axis, > 1E5 ohm-cm, both sides polished/silicon face with CMP finish. One p-type, > 1 x 1020 cm-3 epilayer of 5.0 ?m thick. 4. SIMS analysis of epilayers. 5. Delivery to be no later than 8 weeks from date of receipt of PO.