93--4-INCH DIAMETER 4H-SIC JFET EPITAXIAL WAFERS

This notice is a combined synopsis/solicitation for commercial items prepared in accordance with the format in FAR Subpart 12.6, as supplemented with additional information included in this notice. This announcement constitutes the only solicitation; offers are being requested and a written solicitation will not be issued. This notice is being issued as a Request for Quotations (RFQ) Silicon Carbide Wafers with Epitaxial Layers meeting the following specifications: Quantity of 6 (A) Shall be a single crystal of the 4H polytype. (B) Shall be round with a diameter of 100 mm +/- 0.5 mm, and a thickness of 0.3 mm+/- 0.1 mm, and with both sides polished. (C) On the back of each wafer, identifying numbers/letters shall be produced by a laser patterning process near the primary wafer flat. (D) Shall be nitrogen doped (n-type) with a resistivity less than 1 ohm-cm and with average micropipe density of less than 2 per square cm. (E) At least 70% of the top surface area (with a 3mm edge exclusion) shall be usable, i.e., free of area defects including hexagonal platelets, foreign polytypes and orange peel as defined in SEMI specification M55-4-0315. (F) Shall be (with a 3mm edge exclusion) entirely free of optically observable crack defects that are in excess of 5 mm in length. (G) Shall have flats in conformance with SEMI specifications M55-4-0315. (H) On the front of each wafer, there shall be the following single-crystal homoepitaxial SiC epilayers, specified and verified by secondary ion mass spectroscopy (SIMS) analysis. (Layer #1) Deposited on top of the wafer substrate, a p-type aluminum-doped homoepitiaxial SiC layer of 2 x 1018 cm-3 1.0 x 1018 cm-3 of 4.0 1 micrometers thickness. (Layer #2) Deposited on top of the Layer #1 p-layer described above, a p-type homoepitaxial SiC layer of less than 5 x 1015 cm-3 of 6.0 1 micrometers thickness. Lower doping is desired on a "best effort" basis, but the entire layer shall remain of p-type conductivity. (Transition Layer) Deposited on top of the Layer #2 described above, a doping transition layer from the p-type doping achieved in Layer #2 to the n-type doping described for Layer #3 below. The doping of this transition layer shall not anywhere exceed the n-type doping described for Layer #3 below anywhere in or between Layers #2 and #3. The thickness of this transition layer shall not exceed 0.04 m in thickness, and smaller thickness is desired so long as the doping specification described above is met. (Layer #3) Deposited on top of the Transition Layer described above, an n-type homoepitaxial SiC layer of 9.0 x 1016 cm-3 2 x 1016 cm-3 of 0.40 0.05 micrometers thickness. (Layer #4) Deposited on top of the Layer #3, a p-type homoepitaxial SiC layer of greater than 1.7 x 1018 cm-3 of 0.05 0.02 micrometers thickness. (Layer #5) Deposited on top of the Layer #4, a p-type homoepitaxial SiC layer of greater than 1.0 x 1020 cm-3 of 0.2 0.02 micrometers thickness. Higher doping is desired (up to 1 x 1021 cm-3) on a "best effort" basis. (I) Layers #1 through #4 described above in part (H) shall be grown in a single epitaxial growth run. (J) The epilayer (front) wafer face shall be the silicon face. (K) The contractor shall provide Excel data file(s) of SIMS n-type and p-type doping vs. depth profiles measured from a test wafer proving growth of the 4H-SiC homoepitaxial epilayers conforming to all doping and thickness specifications listed in (H) above. The provisions and clauses in the RFQ are those in effect through FAC 2005 -84 ENTER THE NUMBER-CURRENT FAC CAN BE OBTAINED FROM http://nais.nasa.gov/far/ . The NAICS Code and the small business size standard for this procurement are 334413/500 respectively. The offeror shall state in their offer their size status for this procurement. All responsible sources may submit an offer which shall be considered by the agency. Delivery to NASA GLENN RESEARCH CENTER, 21000 BROOKPARK ROAD, CLEVELAND OHIO 44135-3191. Delivery shall be FOB Destination. All contractual and technical questions must be in writing (e-mail) to Scott Stidham not later than Nov 20, 2015 @ noon. Telephone questions will not be accepted. Offers for the items(s) described above are due by close of business on Friday Nov 27, 2015 to contact@example.gov and must include, solicitation number, FOB destination to this Center, proposed delivery schedule, discount/payment terms, warranty duration (if applicable), taxpayer identification number (TIN), identification of any special commercial terms, and be signed by an authorized company representative. Offerors are encouraged to use the Standard Form 1449, Solicitation/Contract/Order for Commercial Items form found at URL: http://server-mpo.arc.na sa.gov/Services/NEFS/NEFSHome.tml Offerors shall provide the information required by FAR 52.212-1 (APR 2014), Instructions to Offerors-Commercial Items, which is incorporated by reference. If the end product(s) offered is other than domestic end product(s) as defined in the clause entitled "Buy American Act -- Supplies," the offeror shall so state and shall list the country of origin. FAR 52.212-4 (DEC 2014), Contract Terms and Conditions-Commercial Items is applicable. FAR 52.212-5 (MAR 2015), Contract Terms and Conditions Required To Implement Statutes or Executive Orders-Commercial Items is applicable and the following identified clauses are incorporated by reference: 52.204-10, 52.209-6, 52.219-28, 52.222-3, 52.222-19, 52.222-21, 52.222-26, 52.222-36, 52.222-50, 52.223-18, 52.225-1, 52.225-13, 52.232-33 The FAR may be obtained via the Internet at URL: http://www.acquisition.gov/far/index.htm l The NFS may be obtained via the Internet at URL: http://www.hq.nasa.gov/o ffice/procurement/regs/nfstoc.htm Selection and award will be made to that offeror whose offer will be most advantageous to the Government, with consideration given to the factors of proposed technical merit, price, and past performance. Other critical requirements: Meeting all required specifications shall also be considered It is critical that offerors provide adequate detail to allow evaluation of their offer. (SEE FAR 52.212-1(b)). Offerors must include completed copies of the provision at 52.212-3 (MAR 2015), Offeror Representations and Certifications - Commercial Items with their offer. The provision may be obtained via the internet at URL: http: //farsite.hill.af.mil/reghtml/regs/far2afmcfars/fardfars/far/52_000.htm . These representations and certifications will be incorporated by reference in any resultant contract. NASA Clause 1852.215-84 (NOV 2011), Ombudsman, is applicable. The Center Ombudsman for this acquisition can be found at http://prod.nais.nasa.gov/pub/p ub_library/Omb.html . Prospective offerors shall notify this office of their intent to submit an offer. It is the offeror's responsibility to monitor the following Internet site for the release of solicitation amendments (if any): http://prod.nais.nasa.gov/cgi- bin/nais/link_syp.cgi . Potential offerors will be responsible for downloading their own copy of this combination synopsis/solicitation and amendments (if any).