This Combined Synopsis/Solicitation opportunity from National Aeronautics And Space Administration was posted on March 19, 2021. The submission period has ended. Browse the details below for market research, or find similar active opportunities.
DEPOSITION OF SILICON DIOXIDE LAYERS ON 100 MM DIAMETER SEMICONDUCTOR WAFERS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION AT 720 - C USING TETRAETHYL ORTHOSILICATE PRECURSOR
Contract Overview
Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.
Active Opportunities Like This One
General Info
Contract Value
$228,299Place of Performance
Cleveland, OH, 44135, USASet-Aside
Awardee
GENERAL ELECTRIC COMPANYAward Issued Date
Documents
1AI Contract Breakdown
Uniform Contract FormatContract not broken down yet
CLEATUS splits the solicitation into Uniform Contract Format (UCF) sections: scope, pricing, deliverables, and evaluation criteria.
Timeline
Submission Closed
Organization & Contact Information
Full Description
More opportunities from National Aeronautics And Space Administration → NASA Shared Services Center
Same awarding agency
Earlier notices in this NAICS code
Posted before this notice, open and closed
Find Active Opportunities Like This
Get AI-powered intelligence on the opportunities still open
Every page of the solicitation package shredded into a compliance breakdown
AI-powered matching based on your capabilities and past performance
Competitor and incumbent history on the requirement
Automated alerts on amendments, Q&A deadlines, and award
Join 750+ contractors already using CLEATUS
