Epitaxial Growth of Semiconductor Materials

The contract pertains to the epitaxial growth of compound semiconductor materials such as GaAs, InP, and GaN using molecular beam epitaxy (MBE) or organometallic vapor phase epitaxy (OMVPE) techniques, aimed at advancing optoelectronic and power devices. The work requires precision fabrication of high-quality semiconductor layers with specific structural and electronic properties to support next-generation applications in sensing, communication, and energy systems. The performance location is designated as Washington, DC, with a postal code of 20375, indicating that the work will be conducted at or near the Naval Research Laboratory facility. The contract is classified as a subcontract under NAICS code 334418, which covers semiconductor and related device manufacturing, and is issued by the Department of Defense through the Naval Research Laboratory. The solicitation was posted on July 29, 2026, with a firm deadline for responses set for August 13, 2026, at 7:00 PM Eastern Time. There is no specified set-aside status for small businesses or other categories, and no point of contact information is provided within the data. Interested parties must submit proposals prior to the deadline to be considered for award, and all technical work must comply with the requirements for advanced epitaxial layer growth necessary to meet defense-related performance specifications. The absence of a solicitation number suggests this may be an internal or pre-award notice, and the linked UI URL should be used to access additional submission guidelines and requirements.