NOTICE OF INTENT TO SOLE SOURCE: Two (2) 780 nanometer (nm) Tapered Amplifier Laser Systems
Contract Overview
Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.
AI Contract Overview
The U.S. Department of Defense, through the Office of W6QK Acc-Apg Adelphi in Adelphi, Maryland, has issued a notice of intent to sole source the procurement of two 780 nanometer tapered amplifier laser systems under solicitation number W911QX26QA184. This action is classified as a combined action with no set-aside, indicating that the procurement is open to all eligible contractors without preference for small businesses or other designated categories. The North American Industry Classification System code 334516 identifies this as a transaction involving semiconductor and related device manufacturing, aligning with the specialized nature of the requested laser systems. The requirement is critical to mission-critical operations supported at the Adelphi location, where the systems will be deployed and utilized. The notice was posted on August 4, 2026, with a response deadline of August 11, 2026, at 3:30 PM Eastern Time, allowing only a one-week window for potential vendors to submit proposals or express interest. The sole source justification implies that only one vendor possesses the unique technical capability or proprietary technology necessary to meet the precise specifications of the 780 nm tapered amplifier laser systems, likely due to performance, compatibility, or intellectual property constraints. Primary point of contact for inquiries is William Nuamah, reachable via phone at 520-672-9609 or email at william.nuamah.civ@army.mil, and all official correspondence must comply with the SAM.gov portal requirements under the provided UI link. Failure to respond within the deadline may result in the procurement being restructured or delayed.
General Info
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Place of Performance
Adelphi, MD, 20783, USASet-Aside
Documents
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Timeline
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Full Description
Quantity of two (2) 780 nanometer (nm) Tapered Amplifier Laser Systems
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