UNITED SILICON CARBIDE, INC.
UNITED SILICON CARBIDE, INC. is a federal contractor, registered under UEI E1ZMN21UWJK5 and CAGE code 1H9B2. It has been awarded $55,459,808 in federal contracts. Primary work spans Research and Development in the Physical, Engineering, and Life Sciences (except Biotechnology), Unknown NAICS, and Research and Development in the Physical, Engineering, and Life Sciences. Top awarding agencies include Department Of Defense, Department Of Energy, and National Aeronautics And Space Administration.
Contact Information
Registration and classification details
Registration
UEI Code
E1ZMN21UWJK5CAGE Code
1H9B2Entity Structure
Corporate Entity (Not Tax Exempt)Established
N/ABusiness Classifications
NAICS Codes
Federal Contracting Overview
Award totals, agency breakdown, NAICS distribution, and geographic footprint.
AI Capability Profile
United Silicon Carbide, Inc. specializes in the research and development of advanced silicon carbide-based power electronics, with a focus on high-voltage, high-temperature semiconductor devices for defense applications. Their technical expertise centers on vertical JFET architectures, power source ...
United Silicon Carbide, Inc. specializes in the research and development of advanced silicon carbide-based power electronics, with a focus on high-voltage, high-temperature semiconductor devices for defense applications. Their technical expertise centers on vertical JFET architectures, power source design, and the integration of wide-bandgap materials into mission-critical electronic systems. The company leverages deep knowledge in compound semiconductor processing to develop ruggedized, energy-efficient power components suited for harsh environments, particularly in aerospace and defense platforms. Their work on IGF SILICON CARBIDE VERTICAL JFET systems demonstrates a niche specialization in next-generation power electronics that enhance performance, reduce thermal load, and improve reliability in modular energy systems for military applications. The contractor has delivered R&D services exclusively to the Department of Defense, consistently supporting advanced electronics initiatives tied to power management, energy conversion, and electronic warfare systems. Their engagements reflect a pattern of targeted, technically demanding projects requiring innovation in materials science and semiconductor device physics, suggesting a trusted, specialized relationship with defense R&D arms focused on next-generation power systems. United Silicon Carbide, Inc. operates within the narrow but critical NAICS categories of physical and engineering R&D, excluding biotechnology and nanotechnology. This positions them as a high-specialization contractor in compound semiconductor development, serving the defense and advanced electronics sectors with a focus on materials-driven innovation rather than broad-spectrum engineering services. As a small business structured as a 2L entity based in Princeton, New Jersey, the company maintains a lean, focused operational model. While it holds no formal government certifications, its technical deliverables and DoD contract history establish a credible presence in the defense electronics R&D market, where deep domain expertise outweighs formal accreditation in securing mission-critical work.
Key Performance Metrics
Awards Count
66
All time
Active
1
Currently performing
Completed
65
Past period of performance
Total Awards
All time
Contracts
Prime · all time
Subcontracts
Sub · all time
Grants
Prime · all time
Subgrants
Sub · all time
Award Analytics & Distribution
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