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UNITED SILICON CARBIDE, INC.

UNITED SILICON CARBIDE, INC. is a federal contractor, registered under UEI E1ZMN21UWJK5 and CAGE code 1H9B2. It has been awarded $55,459,808 in federal contracts. Primary work spans Research and Development in the Physical, Engineering, and Life Sciences (except Biotechnology), Unknown NAICS, and Research and Development in the Physical, Engineering, and Life Sciences. Top awarding agencies include Department Of Defense, Department Of Energy, and National Aeronautics And Space Administration.

Contact Information

Registration and classification details

Registration

UEI Code

E1ZMN21UWJK5

CAGE Code

1H9B2

Entity Structure

Corporate Entity (Not Tax Exempt)

Established

N/A

Business Classifications

For Profit Organization

NAICS Codes

334413Semiconductor and Related Device Manufacturing(Primary)

Federal Contracting Overview

Award totals, agency breakdown, NAICS distribution, and geographic footprint.

AI Capability Profile

United Silicon Carbide, Inc. specializes in the research and development of advanced silicon carbide-based power electronics, with a focus on high-voltage, high-temperature semiconductor devices for defense applications. Their technical expertise centers on vertical JFET architectures, power source ...

United Silicon Carbide, Inc. specializes in the research and development of advanced silicon carbide-based power electronics, with a focus on high-voltage, high-temperature semiconductor devices for defense applications. Their technical expertise centers on vertical JFET architectures, power source design, and the integration of wide-bandgap materials into mission-critical electronic systems. The company leverages deep knowledge in compound semiconductor processing to develop ruggedized, energy-efficient power components suited for harsh environments, particularly in aerospace and defense platforms. Their work on IGF SILICON CARBIDE VERTICAL JFET systems demonstrates a niche specialization in next-generation power electronics that enhance performance, reduce thermal load, and improve reliability in modular energy systems for military applications. The contractor has delivered R&D services exclusively to the Department of Defense, consistently supporting advanced electronics initiatives tied to power management, energy conversion, and electronic warfare systems. Their engagements reflect a pattern of targeted, technically demanding projects requiring innovation in materials science and semiconductor device physics, suggesting a trusted, specialized relationship with defense R&D arms focused on next-generation power systems. United Silicon Carbide, Inc. operates within the narrow but critical NAICS categories of physical and engineering R&D, excluding biotechnology and nanotechnology. This positions them as a high-specialization contractor in compound semiconductor development, serving the defense and advanced electronics sectors with a focus on materials-driven innovation rather than broad-spectrum engineering services. As a small business structured as a 2L entity based in Princeton, New Jersey, the company maintains a lean, focused operational model. While it holds no formal government certifications, its technical deliverables and DoD contract history establish a credible presence in the defense electronics R&D market, where deep domain expertise outweighs formal accreditation in securing mission-critical work.

Key Performance Metrics

Awards Count

66

All time

Active

1

Currently performing

Completed

65

Past period of performance

Total Awards

All time

Contracts

Prime · all time

Subcontracts

Sub · all time

Grants

Prime · all time

Subgrants

Sub · all time

Award Analytics & Distribution

Awards by Agency
Awards by Agency Over Time
Awards by Place of Performance

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