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99--TECHNOLOGY TRANSFER OPPORTUNITY X RAY DIFFRACTION METHOD FOR DEFECTCHARACTERIZATION OF EPITAXIALLY GROWN CUBIC SEMICONDUCTOR LAYERS

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NASA Langley Research Center is offering licensing opportunities for a new semiconductor epitaxial growth and characterization technology that enables rhombohedrally aligned cubic semiconductors to be grown on trigonal crystal substrates. This innovation impacts a variety of important semiconductor materials, including Group IV alloys like silicon, germanium, and SiGe; Group III-V compounds such as gallium arsenide and gallium phosphate; and Group II-VI materials like zinc selenide and cadmium telluride. The technology is particularly valuable for applications requiring high power, high frequency, optical fiber communication, far-infrared imaging, and high temperature operation, with potential uses in cellular communications and other advanced devices. It allows detailed mapping of defect density and location, facilitating optimization of growth processes to produce high-quality, defect-free semiconductor devices. The licensing rights for this technology may be granted on an exclusive or nonexclusive basis, potentially with specified fields of use. Companies interested in commercializing, manufacturing, or marketing this technology are invited to submit their interest to NASA Langley’s Strategic Relationships Office via Research Triangle International. The initial responses will be used to gauge market interest and determine the potential for future licensing opportunities. Should sufficient interest be demonstrated, NASA will proceed with the formal licensing process in accordance with federal regulations. This notice is for informational and market research purposes only and does not anticipate a procurement or contract award.

General Info

NASA offers licensing for advanced semiconductor growth technology enabling high-quality defect mapping.

Agency

N/A

NAICS

927110 - Space Research and Technology

Place of Performance

Not specified

Set-Aside

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Full Description

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NASA Langley Research Center in Hampton, VA solicits interest from companiesinterested in obtaining license rights to commercialize, manufacture and market thefollowing technology. License rights may be issued on an exclusive or nonexclusive basisand may include specific fields of use. THE TECHNOLOGY: NASA Langley researchers have developed a novel semiconductor epitaxial growth andcharacterization technology for rhombohedrally aligned cubic semiconductors on trigonalcrystal substrates. Several important semiconductor materials are potentially affected bythis technology, including cubic semiconductor alloys of Group IV materials such assilicon (Si), germanium (Ge), carbon (C) and its alloy SiGe, Group III-V materials suchas gallium arsenide (GaAs) andgallium phosphate (GaP), and Group II-VI materials such as zinc selenide (ZnSe) andcadmium telluride (CdTe) on various new trigonal substrates. Many of these semiconductormaterials are being used or developed for a number of high power, high frequency, opticalfiber communication, far-infrared imaging, and high temperature device applications,including cellular communications as one example. This characterization method enablesmapping of defect density and defect location, allowing optimization of growth processparameters forfabricating high-quality, defect-free semiconductor devices.To express interest in this opportunity, please respond to Sean Sullivan, ResearchTriangle International (RTI), at: NASA Langley Research Center, Strategic RelationshipsOffice (SRSO), 17 West Taylor St., Mail Stop 218, Building 1212, Room 110 Hampton,Virginia, E-mail: contact@example.gov, or phone: +1 (555) 000-0000. Please indicate thedate and title of the FBO notice and include your company and contact information.RTI is responsible for aggregating and acknowledging all responses. These responses areprovided to members of NASA Langleys Innovative Partnerships Office within the SRO forthe purpose of promoting public awareness of our technology products, and conductingpreliminary market research to determine public interest in and potential for futurelicensing opportunities. If direct licensing interest results from this posting, SRO willfollow the formal licensing process of posting in the Federal Register as required. Nofollow-on procurement is expected to result from responses to this Notice.

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