99--TECHNOLOGY TRANSFER OPPORTUNITY X RAY DIFFRACTION METHOD FOR DEFECTCHARACTERIZATION OF EPITAXIALLY GROWN CUBIC SEMICONDUCTOR LAYERS
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NASA Langley Research Center is offering licensing opportunities for a new semiconductor epitaxial growth and characterization technology that enables rhombohedrally aligned cubic semiconductors to be grown on trigonal crystal substrates. This innovation impacts a variety of important semiconductor materials, including Group IV alloys like silicon, germanium, and SiGe; Group III-V compounds such as gallium arsenide and gallium phosphate; and Group II-VI materials like zinc selenide and cadmium telluride. The technology is particularly valuable for applications requiring high power, high frequency, optical fiber communication, far-infrared imaging, and high temperature operation, with potential uses in cellular communications and other advanced devices. It allows detailed mapping of defect density and location, facilitating optimization of growth processes to produce high-quality, defect-free semiconductor devices. The licensing rights for this technology may be granted on an exclusive or nonexclusive basis, potentially with specified fields of use. Companies interested in commercializing, manufacturing, or marketing this technology are invited to submit their interest to NASA Langley’s Strategic Relationships Office via Research Triangle International. The initial responses will be used to gauge market interest and determine the potential for future licensing opportunities. Should sufficient interest be demonstrated, NASA will proceed with the formal licensing process in accordance with federal regulations. This notice is for informational and market research purposes only and does not anticipate a procurement or contract award.
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