99--TECHNOLOGY TRANSFER OPPORTUNITY X-RAY DIFFRACTION WAFER MAPPING METHOD
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NASA Langley Research Center is inviting companies to express interest in licensing a new X-ray diffraction (XRD) wafer mapping technology designed to detect twin defects in single and poly-crystalline wafers at a whole-wafer scale. This innovative method enables the identification of primary twin defects in wafers, specifically targeting (111) plane-oriented cubic semiconductors such as silicon, germanium, and SiGe on trigonal crystal substrates. The technology allows for the fabrication of twin-free, high-quality single-crystalline SiGe layer regions, which is a significant improvement over existing defect detection techniques that rely on destructive microscopic analysis. This novel XRD-based characterization method offers micrometer to millimeter resolution and part-per-million sensitivity across entire wafers, facilitating enhanced quality control and elimination of defective wafers during production. It supports NASA’s advanced rhombohedral super-hetero epitaxial semiconductor materials technology, enabling the atomic alignment and growth of various cubic semiconductors on trigonal crystal substrates for the manufacture of superior electrical and optical devices. License rights, which may be exclusive or nonexclusive and segmented by specific fields of use, are available without NASA funding assistance. Interested parties should respond with their contact information and company background to begin the licensing process through NASA Langley’s Office of Strategic Analysis and Business Development.
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