99--TITLE: TECHNOLOGY TRANSFER OPPORTUNITY FORWARD VOLTAGE SHORT-PULSETECHNIQUE FOR MEASURING HIGH POWER LASER DIODE ARRAY JUNCTION TEMPERATURE: LAR-17432

NASA Langley Research Center in Hampton, VA solicits inquiries from companies interested in obtaining license rights to commercialize, manufacture and market the following technology. License rights may be issued on an exclusive or nonexclusive basis and may include specific fields of use. NASA provides no funding in conjunction with these potential licenses. THE TECHNOLOGY: Scientists at NASA Langley Research Center have NASA Langley Research Center has developed a new technology for measuring the junction temperature of laser diode arrays (LDAs) that can support dramatically improved LDA fault analysis and lifetime estimates. This technology provides better spatial and temporal resolution than spectral chirp or thermal imaging methods and can be integrated into existing LDA systems, such as laser diode drivers, without significant additional costs (including weight, power, and space). Potential applications include quality control and screening of LDAs for maximum lifetime, optimizing development of operational parameters, or providing real-time operational diagnostics/prognostics. NASAs Forward Voltage Short-Pulse Technique provides a novel alternative means to measure LDA junction temperature. Laser diode systems contain a driver that provides nominal quasi-continuous wave pulses. In this technique, a second driver is used to provide precise pulses between operational pulses. This facilitates the accurate derivation of junction temperatures by precisely measuring the voltage of these second pulses. Furthermore, this technique uses small injections of current, and resultantly does not contribute to any heat cycling issues within the LDA. Thermal cycling is a key mechanical stressor that can cause premature LDA failure. Competing technologies such as spectral chirp and thermal imaging do not provide the speed or spatial resolution to quickly locate hot spots at the junction of the LDA bars. Unlike these technologies, this technique can accurately measure the LDA thermal parameters, and, with little cost, can be easily incorporated into the operation of existing LDAs for real-time junction temperature monitoring. This in turn may facilitate the development of smart laser diode drivers that can adjust operating parameters to LDA conditions. U.S. patent 8,112,243. To express interest in this opportunity, please respond to contact@example.gov with the title of this Technology Transfer Opportunity as listed in this FBO notice and your preferred contact information. Please also provide the nature of your interest in the technology along with a brief background of your company. For more information about licensing other NASA-developed technologies, please visit the NASA Technology Transfer Portal at http://technology.nasa.gov/ . These responses are provided to members of NASA Langleys Office of Strategic Analysis and Business Development OSACB for the purpose of promoting public awareness of NASA-developed technology products, and conducting preliminary market research to determine public interest in and potential for future licensing opportunities. If direct licensing interest results from this posting, OSACB will follow the required formal licensing process of posting in the Federal Register. No follow-on procurement is expected to result from responses to this Notice.