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CHIPS R&D: EUV Photoresists, Soft X-ray Reflectivity Hardware Package, Soft X-ray Reflectivity Hardware Package

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This project, managed by the Department of Commerce under the CHIPS R&D initiative, focuses on advancing extreme ultraviolet lithography by addressing critical measurement gaps in photoresist chemistries. The initiative aims to overcome limitations in semiconductor scaling and yield by investigating how EUV exposure alters resist chemistry and spatial distribution. A dedicated NIST team will characterize advanced lithographic materials and study the patterning process in situ to better understand the mechanisms that influence pattern quality at nanoscale dimensions. The scope of work involves the development of a specialized suite of metrology techniques designed to provide tailored sensitivity to the chemical and structural properties of photoresists. This effort includes the implementation of a Soft X-ray Reflectivity Hardware Package to enable precise measurements of chemical heterogeneities. The performance of this research is centered in Gaithersburg, Maryland, and is categorized under NAICS code 334413.

General Info

NIST project advancing EUV lithography through photoresist chemistry and metrology research in Maryland.

NAICS

334413 - Semiconductor and Related Device Manufacturing

Place of Performance

GAITHERSBURG, MD

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NONE

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Organization & Contact Information

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AgencyDepartment Of Commerce → Office of the Director
Contacts1 person available
OfficeN/A
Office AddressN/A
Contacts
NATHALI MEDINA

Full Description

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Abstract The semiconductor industry continues to push for smaller features, more integration, and increased yield. New photoresist chemistries and advances in extreme ultraviolet lithography are enabling this trend. However, this is inhibited by a lack of measurements describing heterogeneities in chemistry that contribute to the quality of photoresist patterns at these smaller dimensions. This includes fundamental questions into how the EUV exposure changes the resist chemistry and its spatial extent, and the underlying mechanisms that produce those changes. Our proposed NIST team will characterize the properties of advanced lithographic materials, measure nanoscale chemical distributions, and study the patterning process in situ. This will be accomplished by further developing a suite of metrology techniques which have tailored sensitivity to both the chemistry and structure of the photoresists and how the exposure processes influ

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