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CHIPS R&D: RF Metrology for HF Transistor Models, Foundry fabrication Teledyne

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The CHIPS R&D project, titled RF Metrology for HF Transistor Models and associated with Foundry fabrication Teledyne, aims to address critical deficiencies in US semiconductor manufacturing. Current challenges include poor yield, reproducibility issues, and a reliance on outdated measurement techniques and underperforming models. To resolve these gaps, the initiative proposes a comprehensive framework for developing and verifying high-frequency transistor models through new on-wafer standards, precision noise measurements for quality assurance, and enhanced characterization methods. Managed by the Department of Commerce Office of the Director, this effort focuses on creating optimal models tailored to specific technologies and implementing verification processes across frequencies using key performance indicators. The project seeks to overcome existing limitations where models are currently extracted from low-frequency measurements due to a lack of proper instrumentation and inaccurate calibration. The performance of this work is centered in Boulder, Colorado, under NAICS code 334413.

General Info

CHIPS R&D project improving HF transistor models and semiconductor manufacturing with Teledyne fabrication.

NAICS

334413 - Semiconductor and Related Device Manufacturing

Place of Performance

BOULDER, CO

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Organization & Contact Information

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AgencyDepartment Of Commerce → Office of the Director
Contacts1 person available
OfficeN/A
Office AddressN/A
Contacts
NATHALI MEDINA

Full Description

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Abstract Advanced semiconductor technology has led to continuous performance improvements in transistors. However, many iterations are needed to obtain optimal performance and the yield and reproducibility is incredibly poor. Furthermore, US chip makers are ill-equipped with legacy measurement techniques and underperforming models. We propose a robust path to develop and verify high-frequency transistor models: 1) new on-wafer standards and calibration, 2) precision noise measurements for transistor quality assurance, 3) improved characterizations, 4) optimal models tailored to a given technology, and 5) transistor model verification across frequency with key performance indicators. Problem Statement(s) Due to the challenges of high-frequency measurements, that includes inaccuracy in on-wafer calibration and a lack of instrumentation for transistor characterization, models are currently extracted from low-frequency measure

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