This Government Contract opportunity from Department Of Defense was posted on April 16, 2026. The submission period has ended. Browse the details below for market research, or find similar active opportunities.
Compound Semiconductor Design and Foundry Integration
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This contract involves providing specialized design and integration support for compound semiconductors, specifically gallium nitride (GaN) and indium phosphide (InP), across multiple semiconductor foundries. The goal is to ensure both manufacturability and performance within three-dimensional heterogeneous integration (3DHI) architectures. The work focuses on leveraging expertise in semiconductor design to optimize these materials for advanced manufacturing processes, facilitating their use in cutting-edge technologies. Issued by the Defense Advanced Research Projects Agency under the Department of Defense, this subcontract falls under the NAICS code 334418, which pertains to semiconductor manufacturing. The contract was posted on April 16, 2026, with responses due by July 31, 2026. It does not specify set-aside designations or detailed location information for performance or points of contact. The emphasis is on collaborative involvement with various foundries to support development and integration efforts for compound semiconductor applications.
General Info
Agency
NAICS
Place of Performance
VASet-Aside
Documents
This scope was carved out of DARPA-SN-26-69.
The full solicitation package (1 document), including the RFP, is on the prime solicitation, not on this scope.
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Timeline
Submission Closed
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