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Deferentially pumped focused x-ray source

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Federal

Contract Overview

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AI Contract Overview

The Department of Commerce, through the Office of the Director, is seeking a differentially pumped focused x-ray source to support the development of a new plasma-XPS metrology platform. This initiative leverages expertise in plasma-surface interaction and operando photoelectron spectromicroscopy to enable quantitative, sub-monolayer sensitive chemical analysis of wafer surfaces, thin films, and interfaces during plasma processing. The project aims to enhance semiconductor process development and inspection toolsets for next-node technology through collaborations with industrial partners and academia. The work will be performed in Gaithersburg, Maryland, under NAICS code 334413. This effort focuses on advancing fundamental measurement science and providing real-time monitoring capabilities essential for semiconductor control. Interested parties can coordinate through the designated point of contact, Nathali Medina, as part of the agency's procurement forecast.

General Info

Commerce seeks a differentially pumped focused x-ray source for plasma-XPS metrology development.

Agency

Department Of Commerce → Office of the Director

NAICS

334413 - Semiconductor and Related Device Manufacturing

Place of Performance

GAITHERSBURG, MD

Set-Aside

NONE

Documents

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Timeline

PostedDec 3

forecast

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Organization & Contact Information

AgencyDepartment Of Commerce → Office of the Director

Contacts1 person available

OfficeN/A

Organization / AgencyDepartment Of Commerce → Office of the Director

Office AddressN/A

Contacts

NATHALI MEDINA

contact@example.gov

Full Description

Advanced in situ and operando methods for real time monitoring of the chemical status of wafer surfaces, thin films, and interfaces during plasma processing are essential for semiconductor process development and control. We will build upon NIST's leading expertise in plasma-surface interaction, plasma diagnostics, and operando photoelectron spectromicroscopy to develop a new plasma-XPS metrology platform for quantitative sub-monolayer sensitive in-situ chemical analysis of wafer surfaces during plasma processing. This innovative metrology will be a valuable addition to the next node semiconductor process development and inspection toolset and, in a broader scope, to the fundamental measurement science of plasma-surface interaction. We will collaborate with industrial partners (see letters of support) and academia in the development, implementation, and dissemination of plasma-XPS metrology. The data generated during this project and th