Epitaxial Growth of SiGe Films (10–15% Ge)
Active
FederalResponse Deadline
Contract Overview
Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.
General Info
Agency
Department Of Commerce NistView Agency
NAICS
334413 - Semiconductor and Related Device ManufacturingView NAICS
Place of Performance
MDSet-Aside
SBA
Documents
This scope was carved out of 1333ND26QNB030476.
The full solicitation package (1 document), including the RFP, is on the prime solicitation, not on this scope.
Silicon and Silicon/Germanium Epitaxial Wafers
AI Contract Breakdown
Uniform Contract FormatNo contract breakdown available.
Cannot generate Contract Breakdown because no documents were found from this contract's source.
Timeline
Response Deadline
Organization & Contact Information
Show more
AgencyDepartment Of Commerce Nist
ContactsNo contacts available
OfficeN/A
Office AddressN/A
ContactsNo contact information available
Full Description
Show more
Grow silicon-germanium epitaxial layers with 10–15% Ge concentration and 20–30 nm thickness, requiring control over doping, strain, and crystallinity.
Similar Contracts
Same NAICS industry code
More opportunities from Department Of Commerce Nist
Same awarding agency
