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Epitaxial Growth of SiGe Films (25–30% Ge)

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Federal

Contract Overview

Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.

General Info

Agency

Department Of Commerce NistView Agency

NAICS

334413 - Semiconductor and Related Device ManufacturingView NAICS

Place of Performance

MD

Set-Aside

SBA

Documents

This scope was carved out of 1333ND26QNB030476.

The full solicitation package (1 document), including the RFP, is on the prime solicitation, not on this scope.

View the prime solicitation

Silicon and Silicon/Germanium Epitaxial Wafers

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Timeline

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Organization & Contact Information

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AgencyDepartment Of Commerce Nist
ContactsNo contacts available
OfficeN/A
Organization / Agency
Department Of Commerce Nist
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Office AddressN/A
ContactsNo contact information available

Full Description

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Grow high-germanium-concentration SiGe films (25–30% Ge) at 20–30 nm thickness with advanced strain management and defect control.

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