Low Temperature Electrical Measurement System

THIS IS A COMBINED SYNOPSIS/SOLICITATION FOR COMMERCIAL ITEMS PREPARED IN ACCORDANCE WITH THE FORMAT IN FAR SUBPART 12.6- STREAMLINED PROCEDURES FOR EVALUATION AND SOLICITATION FOR COMMERCIAL ITEMS-AS SUPPLEMENTED WITH ADDITIONAL INFORMATION INCLUDED IN THIS NOTICE. THIS ANNOUNCEMENT CONSTITUTES THE ONLY SOLICITATION; QUOTATIONS ARE BEING REQUESTED, AND A SEPARATE WRITTEN SOLICITATION DOCUMENT WILL NOT BE ISSUED. This solicitation is a request for quotation. The solicitation document incorporated provisions and clauses are those in effect through Federal Acquisition Circular (FAC) 2005-86-1. The associated North American Industrial Classification System (NAICS) code for this procurement is 334516 with a small business size of 500 employees. This procurement is a 100% total small business set aside. In accordance with the non-manufacturer rule, the contractor shall be a small business under the applicable size standard and shall provide either its own product or that of another domestic small business manufacturing or processing concern. See FAR 19.102(f) for additional information. Offerors must submit all questions concerning this solicitation in writing to Ching.Hung@nist.gov. Questions should be received no later than 3 calendar days after the issuance date of this solicitation. Any responses to questions will be made in writing, without identification of the questioner, and will be included in an amendment to the solicitation. Even if provided in other form, only the question responses included in the amendment to the solicitation will govern performance of the contract. The backup point of contact is Lynda.Roark at Lynda.Roark@nist.gov. (End of Provision) BACKGROUND: The NIST Engineering Physics Division (SDMD) provides leadership in conducting research in the areas of dimensional, nanometer-scale, surface, and acoustic pressure metrology; accelerometry; silicon Complementary Metal-Oxide Semiconductor (CMOS) technology; Micro Electro Mechanical Systems (MEMS); power electronics; nano electronics; and flexible/printed electronics. The technical programs, their goals, technical strategies, activities, and accomplishments described here for each Division project clearly demonstrate the impact of the SDMD's leadership and effective service as it continues to respond to the needs of industry and to contribute to the scientific and engineering communities. The division has the capability for phosphorus doping of Si (100) surfaces with atomic scale control using UHV STMs in the atom based laboratory. There is a concerted effort within the dimensional metrology project to establish the capability to fabricate atomic scale dopant devices with single atom precision. Utilizing hydrogen mask lithography with the help of a scanning tunneling microscope, a single dopant atom can be selectively placed in a silicon 3D lattice. This is the highest precision achievable in semiconductor electronics. The project is in need of a low temperature electrical measurement system to study the transport behavior of the fabricated monolayer phosphorous delta layers and 2D device structures to characterize the transport properties and to assess the quality of the delta layer. Although the initial goal is only to limit the measurements to 2 probe and 4 probe measurements to measure the sheet resistant and also to assess the quality of electrical contacts, the should be expandable to include magnets for Hall measurements in order to understand the mobility and carrier concentration of the delta doped layer. PURPOSE AND OBJECTIVES OF THE PROCUREMENT The overall objective of this acquisition is to acquire one low temperature electrical measurement system to be used by the SDMD at NIST.