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Nickel Mask Electroplating and Patterning

Active

Federal

Response Deadline10/16/2026, 09:00:00 PM UTC

Contract Overview

Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.

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This subcontract involves the electroplating and patterning of nickel etch masks onto 4H-SiC wafers to support prime contractors on projects for the NASA Glenn Research Center. The scope of work requires the application of a nickel mask and the use of photolithography or precision patterning equipment to define diaphragm radii ranging from 300 to 900 microns. The project is categorized under NAICS code 332710 and will be performed in Cleveland, Ohio. The final deliverable for this engagement is the provision of 4H-SiC wafers with the specified patterned nickel etch mask applied.

General Info

Nickel etch mask patterning on 4H-SiC wafers for NASA Glenn Research Center projects.

Agency

National Aeronautics And Space Administration

NAICS

332710 - Machine Shops

Place of Performance

Cleveland, OH, 44135, USA

Set-Aside

NONE

Documents

This scope was carved out of 80NSSC27946811Q.

The full solicitation package (2 documents), including the RFP, is on the prime solicitation, not on this scope.

View the prime solicitation

Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer

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Timeline

PostedOct 13

subcontract

Response DeadlineOct 16

Submission deadline

Response Deadline

10/16/2026, 09:00:00 PM UTCin 2 days

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Organization & Contact Information

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AgencyNational Aeronautics And Space Administration

ContactsNo contacts available

OfficeN/A

Organization / AgencyNational Aeronautics And Space Administration

Office AddressN/A

ContactsNo contact information available

Full Description

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Performs electroplating of a patterned nickel etch mask onto SiC wafers for prime contractors on NASA Glenn Research Center projects. Applies nickel mask via electroplating and patterns the mask to define diaphragm radii between 300 and 900 microns using photolithography or precision patterning equipment. Delivers 4H-SiC wafers with a patterned nickel etch mask applied.

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