Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer

NASA/NSSC is seeking capability statements for the dopant selective deep reactive ion etching of two 4-inch single crystal 4H-SiC wafers. The project requires etching wafers with a patterned nickel mask to a depth of 320 microns to create 30-micron thick diaphragms with radii between 300 and 900 microns. Technical requirements include a thickness uniformity of plus or minus 5 percent across the wafer, an aspect ratio of no less than 5, smooth sidewalls free of scallops, and fewer than 5 micro mask artifacts per diaphragm surface. Performance will be located at the NASA Glenn Research Center in Cleveland, Ohio. This procurement is being conducted under FAR Part 12 for commercial items or services, and NASA/NSSC intends to issue a sole source contract to Biotronics Inc under the authority of FAR 12.102(a). The current notice is specifically for the collection of capability statements to determine if the procurement should be conducted on a competitive basis; formal quotes will not be evaluated at this time. Interested vendors must submit their qualifications in writing to the primary point of contact, Lindsey McLellan, by October 16, 2026, at 4:00 p.m. CST, ensuring the notice ID 80NSSC27946811Q is referenced.