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Power Electronics Development (Wide Bandgap Materials)

Active
Federal

Contract Overview

Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.

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This subcontract focuses on the research and development of power electronics for prime contractors supporting Department of Energy projects at Sandia National Laboratories. The scope of work involves prototyping and testing devices utilizing wide bandgap materials such as GaN, AlGaN, AlN, Diamond, SiC, and Ga2O3, alongside the development of integrated magnetics and dielectric materials. The project leverages specialized semiconductor fabrication equipment and high-voltage testing facilities to produce power electronic prototypes and detailed material characterization reports. The contract is categorized under NAICS code 334413 and is managed by the Department of Energy. Performance of the work is centered in the 87123 zip code area. The engagement period extends from the posting date of March 25, 2026, through a response deadline of October 1, 2029.

General Info

DOE subcontract for wide bandgap power electronics R&D and prototyping through October 2029.

Agency

Department Of EnergyView Agency

NAICS

334413 - Semiconductor and Related Device ManufacturingView NAICS

Place of Performance

NM, 87123, USA

Set-Aside

NONE

Documents

This scope was carved out of 26_04.

The full solicitation package (1 document), including the RFP, is on the prime solicitation, not on this scope.

View the prime solicitation

Request for Information (RFI) for Advancing Critical and Emerging Microelectronics Technologies

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Timeline

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Organization & Contact Information

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AgencyDepartment Of Energy
ContactsNo contacts available
OfficeN/A
Organization / Agency
Department Of Energy
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Office AddressN/A
ContactsNo contact information available

Full Description

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Researches and develops power electronics for prime contractors on Department of Energy projects at Sandia National Laboratories. Prototypes and tests devices using GaN, AlGaN, AlN, Diamond, SiC, and Ga2O3, including development of magnetic and dielectric materials and integrated magnetics. Utilizes WBG semiconductor fabrication equipment and high-voltage testing facilities. Delivers power electronic prototypes and material characterization reports.

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ACTIVE DEVICES DIVISION

POSTED

about 11 hours ago

DEADLINE

in 1 day
View Details

More opportunities from Department Of Energy

Same awarding agency

NAICS: 54171
Federal
Request for Information (RFI) for Advancing Critical and Emerging Microelectronics Technologies
Solicitation # 26_04
Sandia National Laboratories, under the Department of Energy, has issued Request for Information (RFI) solicitation 26_04 to identify capabilities for advancing critical and emerging microelectronics technologies. The primary objective is to strengthen the domestic semiconductor manufacturing supply chain and maintain U.S. technological leadership. Priority areas for research and prototyping include advanced semiconductor devices such as power electronics, analog and digital signal processing, and communications technologies. The scope also emphasizes microelectronics fabrication and characterization, specifically focusing on advanced packaging, heterogeneous integration, and the use of digital twins and AI to accelerate domestic manufacturing fabs. Additionally, the RFI seeks innovations in the application of artificial intelligence and quantum technology specifically for microelectronics research and development, including scalable quantum computing and AI-driven autonomous agents for cybersecurity. The initiative also covers the commercialization of federally funded scientific discoveries. Interested parties must submit a response of no more than five pages in PDF or Word format by September 30, 2029. Submissions will be evaluated based on the relevance and completeness of the information, the clarity of the response, the respondent's technical understanding, and their professional qualifications.

POSTED

6 months ago

DEADLINE

in about 3 years
View Details

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