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Xray Hardware Pkg

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Federal

Contract Overview

Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.

AI Contract Overview

The Xray Hardware Pkg forecast, issued by the Department of Commerce Office of the Director, focuses on advancing semiconductor manufacturing by addressing measurement gaps in photoresist chemistries used in extreme ultraviolet lithography. The initiative aims to overcome limitations in feature size and yield by investigating how EUV exposure alters resist chemistry and spatial distribution. A dedicated NIST team will characterize advanced lithographic materials and study the patterning process in situ to better understand the mechanisms driving chemical heterogeneities at the nanoscale. To achieve these goals, the project involves the development of a specialized suite of metrology techniques designed to measure the chemistry and structure of photoresists. This work will be performed in Gaithersburg, Maryland, under NAICS code 334413. The effort is critical for enabling smaller features and increased integration in semiconductor production by providing the necessary data to optimize the patterning process.

General Info

NIST will develop metrology techniques to improve EUV semiconductor photoresist manufacturing in Maryland.

Agency

Department Of Commerce → Office of the Director

NAICS

334413 - Semiconductor and Related Device Manufacturing

Place of Performance

GAITHERSBURG, MD

Set-Aside

NONE

Documents

No documents available

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Timeline

PostedDec 3

forecast

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Organization & Contact Information

AgencyDepartment Of Commerce → Office of the Director

Contacts1 person available

OfficeN/A

Organization / AgencyDepartment Of Commerce → Office of the Director

Office AddressN/A

Contacts

NATHALI MEDINA

contact@example.gov

Full Description

The semiconductor industry continues to push for smaller features, more integration, and increased yield. New photoresist chemistries and advances in extreme ultraviolet lithography are enabling this trend. However, this is inhibited by a lack of measurements describing heterogeneities in chemistry that contribute to the quality of photoresist patterns at these smaller dimensions. This includes fundamental questions into how the EUV exposure changes the resist chemistry and its spatial extent, and the underlying mechanisms that produce those changes. Our proposed NIST team will characterize the properties of advanced lithographic materials, measure nanoscale chemical distributions, and study the patterning process in situ. This will be accomplished by further developing a suite of metrology techniques which have tailored sensitivity to both the chemistry and structure of the photoresists and how the exposure processes influence critical