99 -- A Room-Temperature Methaod to Form Strong and Thin Metal/Oxide Interfaces

A Room-Temperature Method to Form Strong and Thin (~1 nm) Metal/Oxide Interfaces Basic research at Sandia National Laboratories in Albuquerque, NM, has discovered a vacuum method to make strong interfaces between metals and oxides at room temperature. This method is ideal for microelectronics and thin film applications. After appropriate oxide surface preparation (it does not have ideal termination) and cleaning, metal is deposited. Cleaning may be done, for example, by an oxygen plasma. Initially, metal deposition must be done using sputter or evaporation sources. A chemical reaction has been found that oxidizes about 1/10 monolayer of the initially arriving metal atoms. These are incorporated into the top layer of the oxide and serve as anchors for other metal atoms. Experimentally, the method was demonstrated for cobalt on alpha-alumina, but it has also been understood using first principles calculations. The latter predict it will work well with most metals, an exception being the noble metals. However, even these can be bound to a previous deposited more reactive metal. After he interface is formed, the metal can be laid rapidly. Crystalline metal was found at only 4-6 monolayers, in spite of a substantial (~7%) lattice mismatch. Sandia (www.sandia.gov) is seeking partners to further develop and apply this technology. For many of the potential applications, we expect our partners may need to fund additional development work at Sandia. For further information please respond by mail or fax to Alane Dulski within 2 weeks at: Sandia National Laboratories, MS 0115, P.O. Box 5800, Albuquerque, New Mexico 87185-0115, Fax: +1 (555) 000-0000. Please indicate the date and title of this notice, the markets in which you would like to apply the technology, and the type of partnering agreements (more information can be found on the Sandia website) your company would be most interested in entering into.