Deep Reactive Ion Etching (DRIE) of Silicon Carbide Substrate

The contract requires deep reactive ion etching (DRIE) processing on a 4H-silicon carbide substrate to fabricate a 70-micron thick diaphragm with radii ranging from 300 to 900 microns, ensuring tight dimensional control and mechanical integrity. Achieving ±5% thickness uniformity across the entire diaphragm surface is critical, as variations outside this tolerance could compromise performance in high-precision applications. The process must also minimize surface defects such as scalloping and trenching, which can degrade structural reliability and introduce unwanted stress concentrations or fluidic irregularities. The work is classified under NAICS code 334413 and is issued as a subcontract by the NASA Shared Services Center on behalf of the National Aeronautics and Space Administration. The solicitation was posted on July 6, 2026, with a response deadline of July 10, 2026, indicating a tight turnaround for qualified vendors to submit technical and commercial proposals. The place of performance and point of contact details are unspecified, suggesting the work may be performed at the contractor’s facility under NASA oversight. Precision etching on silicon carbide, a challenging material due to its hardness and chemical inertness, demands advanced DRIE capabilities and proven experience in semiconductor processing for extreme environments.