This Solicitation opportunity from National Aeronautics And Space Administration was posted on July 6, 2026. The submission period has ended. Browse the details below for market research, or find similar active opportunities.

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Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate

Awarded

80NSSC26936816QFederal

Submission Closed07/10/2026, 01:00:00 PM UTC

Contract Overview

Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.

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NAICS: 334413

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AI Contract Overview

This contract solicitation, titled Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate with solicitation number 80NSSC26936816Q, is issued by the NASA Shared Services Center on behalf of the National Aeronautics and Space Administration. The opportunity was posted on July 6, 2026, with a strict response deadline of July 10, 2026, at 1:00 PM Eastern Time. It is not a request for quotes and any price submissions received will not be reviewed or accepted at this stage, as the evaluation will focus on technical capability rather than cost. The NAICS code 334413 applies to this procurement, indicating it pertains to semiconductor and other electronic component manufacturing. All communications must include the solicitation ID to ensure proper tracking and visibility. The primary point of contact is Monica Wilson, reachable at [email hidden], and the office is located at Stennis Space Center, Mississippi, 39529. The place of performance details are unspecified but will be determined as part of the award process.

General Info

NASA seeks technical capability for GaN epitaxial layer and SiC substrate dry etching via solicitation 80NSSC26936816Q.

Agency

National Aeronautics And Space Administration → NASA Shared Services Center

Contract Value

$85,000

NAICS

334413 - Semiconductor and Related Device Manufacturing

Place of Performance

MS, USA

Set-Aside

NONE

Awardee

BIOTRONICS, INC

Award Issued Date

07/15/2026, 12:00:00 AM UTC

Documents

Statement of Work for Dry Etching of Gallium Nitride and Silicon Carbide Wafer

sow

High

AI Contract Breakdown

Uniform Contract Format

Timeline

PhaseAwarded

PostedJul 6

Solicitation

AwardedJul 15

Contract was awarded

Submission Closed

07/10/2026, 01:00:00 PM UTC

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Organization & Contact Information

AgencyNational Aeronautics And Space Administration → NASA Shared Services Center

Contacts1 person available

OfficeSTENNIS SPACE CENTER, MS, 39529, USA

Organization / AgencyNational Aeronautics And Space Administration → NASA Shared Services Center

Office AddressSTENNIS SPACE CENTER, MS, 39529, USA

Contacts

Monica Wilson

contact@example.gov

Full Description

See the attached SOW.

All correspondence should reference ID# to ensure visibility.

*PLEASE NOTE* THIS IS NOT A REQUEST FOR QUOTES. ANY PRICE OFFERS RECIEVED WILL NOT BE REVIEWED / ACCEPTED AT THIS TIME. A price quote alone generally does not provide sufficient information to evaluate a vendor's technical capability.