This Government Contract opportunity from Department Of Commerce was posted on April 27, 2026. The submission period has ended. Browse the details below for market research, or find similar active opportunities.
Epitaxial Silicon-Germanium (SiGe) Wafer Fabrication – Spec 2
Contract Overview
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The contract calls for the production of silicon-germanium epitaxial layers on silicon substrates with stringent requirements for compositional grading, strain engineering, and interface control to ensure high-performance material properties. The fabrication must meet precise technical specifications to enable applications in advanced semiconductor devices, requiring expertise in low-defect growth techniques and atomic-level precision. The work involves multiple iterations of layer deposition and characterization to achieve the desired lattice matching, strain distribution, and abrupt or graded interfaces between silicon and germanium layers. This is a small business set-aside subcontract under the SBA program, exclusively available to qualified small businesses, with a NAICS code of 334413 for semiconductor and related device manufacturing. The solicitation was posted on April 27, 2026, and responses are due by May 12, 2026, at 5:00 PM. The contracting agency is the National Institute of Standards and Technology under the U.S. Department of Commerce, indicating the project supports federal research and development goals in advanced materials. The place of performance and point of contact details are unspecified, but performance is expected to occur at the awardee’s facility with full compliance to NIST’s technical and quality standards.
General Info
Agency
NAICS
Place of Performance
MDSet-Aside
Documents
This scope was carved out of 1333ND26QNB030152.
The full solicitation package (2 documents), including the RFP, is on the prime solicitation, not on this scope.
Silicon and Silicon/Germanium Epitaxial Wafers
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Timeline
Submission Closed
Organization & Contact Information
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