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This Government Contract opportunity from National Aeronautics And Space Administration was posted on August 13, 2025. The submission period has ended. Browse the details below for market research, or find similar active opportunities.

Gallium Nitride Diode Wafer Fabrication

Closed
80GRC025CA030Federal

Contract Overview

Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.

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General Info

NAICS

334413 - Semiconductor and Related Device Manufacturing

Place of Performance

Tewksbury, MA, 01876, USA

Set-Aside

NONE

Documents

1

Dedicated Diode Run Statement of Work (v3)

PDF, High priority: read this firstsow
High

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Timeline

3 updates
PhaseClosed
Posted

special-notice

Notice updated

Notice type changed from Special Notice to Contract Update. Response deadline changed from Jul 14, 2025 to Aug 20, 2025. NAICS code changed from 541715 to 334413. The notice description changed. The point of contact changed.

Notice updated

Notice type changed from Contract Update to Special Notice. The notice description changed. The point of contact changed.

Notice updated

NAICS code changed from 334413 to 541715. The notice description changed. The point of contact changed.

Response Deadline

Deadline has passed

Submission Closed

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Organization & Contact Information

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AgencyNational Aeronautics And Space Administration
Contacts2 people available
OfficeUSA
Office AddressUSA
Contacts

Full Description

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NASA Glenn Research Center (GRC) has a requirement for a dedicated Gallium Nitride wafer fabrication run to provide 7000 high performance Schottky diodes for integration in high power Rectenna arrays operating at 10 GHz and above. These diodes must meet highly specific qualifications and produce cutting edge performance to enable high-frequency, high-power and high-efficiency power rectification. The device performance requirements outlined in the Statement of Work include global cut-off frequency, return loss, junction capacitance, operational power handling, current handling, and high-temperature operation. These devices must already exist in the vendors catalog and device measurements meeting the SOW requirements must be currently available or else it wouldn't be possible to expect a competitor to deliver these devices with the stated performance within the required time frame. NASA GRC intends to issue a sole source contract to acquire the related capabilities as outlined in the attached Statement of Work from Raytheon Advanced Technologies of Tewksbury, MA under the authority of FAR 6.302-1, only one responsible source and no other supplies or services will satisfy agency requirements. The Government does intend to acquire a commercial product or commercial service using FAR Part 12. Interested organizations may submit their capabilities and qualifications to perform the effort electronically via email to Ian Park (ian.park@nasa.gov) not later than 12:00pm ET on August 20, 2025. Such capabilities/qualifications will be evaluated solely for the purpose of determining whether to conduct this acquisition on a competitive basis. A determination by the Government not to compete this acquisition on a full and open competition basis, based upon responses to this notice, is solely within the discretion of the Government. NASA Clause 1852.215-84, Ombudsman, is applicable. The Center Ombudsman for this acquisition can be found at : https://www.hq.nasa.gov/office/procurement/regs/Procurement-Ombuds-Comp-Advocate-Listing.pdf

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