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Gallium Nitride (GaN) Epitaxial Thin Film Fabrication

Active
Federal

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Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.

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This subcontract involves the epitaxial growth of Gallium Nitride thin film layers for prime contractors supporting Naval Research Laboratory semiconductor projects. The scope of work requires the precision deposition of GaN on 100 mm diameter silicon carbide substrates using high-purity precursors and MOCVD or similar epitaxial growth reactors. All fabrication must strictly adhere to semiconductor industry standards and ISO 9001 quality requirements. The project is managed under the Department of Defense for the Naval Research Laboratory, with performance taking place in Washington. Classified under NAICS code 334413, the contract was posted on September 23, 2026, with a response deadline of October 2, 2026.

General Info

Subcontract for GaN thin film growth on SiC substrates for Naval Research Laboratory.

Agency

Department Of Defense → Naval Research LaboratoryView Agency

NAICS

334413 - Semiconductor and Related Device ManufacturingView NAICS

Place of Performance

Washington, DC, USA

Set-Aside

NONE

Documents

This scope was carved out of N00173-26-Q-1301393403.

The full solicitation package (1 document), including the RFP, is on the prime solicitation, not on this scope.

View the prime solicitation

GaN/SiC wafers

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Timeline

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Organization & Contact Information

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AgencyDepartment Of Defense → Naval Research Laboratory
ContactsNo contacts available
OfficeN/A
Organization / Agency
Department Of Defense → Naval Research Laboratory
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Office AddressN/A
ContactsNo contact information available

Full Description

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Performs epitaxial growth of Gallium Nitride (GaN) thin film layers for prime contractors on Naval Research Laboratory (NRL) semiconductor projects. Executes precision deposition of GaN on 100 mm diameter substrates using MOCVD or similar epitaxial growth reactors and high-purity precursors. Adheres to semiconductor fabrication standards and ISO 9001. Delivers GaN epitaxial thin film layers grown on 100 mm diameter SiC substrates.

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Same NAICS industry code

NAICS: 334413
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ACTIVE DEVICES DIVISION

POSTED

about 10 hours ago

DEADLINE

in 12 days
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