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MBE Absorber Growth and Uniformity Optimization

Active

Federal

Contract Overview

Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.

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This contract focuses on enhancing the growth and uniformity of molecular beam epitaxy (MBE)-grown absorber layers used in infrared focal plane arrays (FPAs), with the goal of improving detector performance and boosting production yield. The work aims to optimize fabrication processes to achieve more consistent quality and efficiency in absorber layers, which are critical for the sensitivity and reliability of infrared detection systems. The subcontract is issued by the Department of Defense under the solicitation titled "MBE Absorber Growth and Uniformity Optimization," with the place of performance specified as Fort Belvoir. It falls under the NAICS code 334413, which covers semiconductor and related device manufacturing. Though specific contract dates and financial details are not provided, the contract was posted in late May 2026 and represents a targeted effort to advance infrared sensor technology through improved materials engineering.

General Info

DoD contract to optimize MBE-grown infrared absorber layers for improved detector performance and yield.

Agency

Department Of Defense → W6QK Acc-ApgView Agency

NAICS

334413 - Semiconductor and Related Device ManufacturingView NAICS

Place of Performance

Fort Belvoir, VA, USA

Set-Aside

NONE

Documents

This scope was carved out of W56KGU26CA004.

The full solicitation package (1 document), including the RFP, is on the prime solicitation, not on this scope.

View the prime solicitation

Direct Bonding for Compound Semiconductor for Use in Dual Band Infrared Focal Plane Arrays

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Timeline

PostedMay 27

subcontract

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Organization & Contact Information

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AgencyDepartment Of Defense → W6QK Acc-Apg

ContactsNo contacts available

OfficeN/A

Organization / Agency

Department Of Defense → W6QK Acc-Apg

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Office AddressN/A

ContactsNo contact information available

Full Description

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Improve the growth and uniformity of MBE-grown absorber layers for infrared FPAs to enhance detector performance and production yield.

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