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This Government Contract opportunity from Department Of Energy was posted on July 7, 2025. The submission period has ended. Browse the details below for market research, or find similar active opportunities.

TECHNOLOGY/BUSINESS OPPORTUNITY Semiconductor Opening Switches with Pre-Pulses Elimination

Closed
IL-13828Federal

Contract Overview

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General Info

NAICS

334413 - Semiconductor and Related Device Manufacturing

Place of Performance

Livermore, CA, USA

Set-Aside

NONE

Documents

0

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Timeline

PhaseClosed
Posted

special-notice

Response Deadline

Deadline has passed

Submission Closed

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Organization & Contact Information

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AgencyDepartment Of Energy → Llns � DOE Contractor
Contacts2 people available
OfficeLivermore, CA, 94551, USA
Office AddressLivermore, CA, 94551, USA

Full Description

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Opportunity: Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop its Semiconductor Open Switch with pre-pulses elimination. Background: A Semiconductor Opening Switch (SOS) is a high-power pulse diode designed to interrupt currents at density levels of up to 10 kA/cm2 in less than 10 nanoseconds. Current state of the art SOSs are widely used as solid-state generators to produce high power laser light, x-rays, and neutron pulses. One of their drawbacks however is that their performance is compromised by the presence of pre-pulses. These unwanted pulses feature long duration time and slow rise time, which degrades the voltage pulse rise time, peak voltage, etc. of the SOS device. There is a need for a different SOS device structure that is able to suppress or eliminate these pre-pulses. Description: LLNL developed a novel SOS diode structure starting with a n-type silicon wafer. On the appropriate sides of the wafer, donor and acceptor dopants with specifically designed and optimized concentration profiles are diffused in the structure. Crucially, an extra n-region is introduced to the structure to address pre-pulses. The result is a SOS diode with an optimized p+/p/n-base/n+ structure, and an extra layer that has a gradient n-doping. The incorporation of this layer effectively suppresses the pre-pulses, increases peak voltage and reduces pulse rise time. This approach has been validated in optimization simulations. Advantages/Benefits: Value Proposition: Improved performance of SOS diodes Vital for compact high voltage pulse generators Potential Applications: Pulsed-power physics Compact high voltage pulse generators High power electronics Development Status: Current stage of technology development: TRL ? 0-2 ? 3-5 ? 5-9 LLNL has filed for patent protection on this invention. LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information. Please visit the IPO website at https://ipo.llnl.gov/resources for more information on working with LLNL and the industrial partnering and technology transfer process. Note: THIS IS NOT A PROCUREMENT. Companies interested in commercializing LLNL's SOS with pre-pulses elimination should provide an electronic OR written statement of interest, which includes the following: Company Name and address. The name, address, and telephone number of a point of contact. A description of corporate expertise and/or facilities relevant to commercializing this technology. Please provide a complete electronic OR written statement to ensure consideration of your interest in LLNL's SOS with pre-pulses elimination. The subject heading in an email response should include the Notice ID and/or the title of LLNL's Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below. Written responses should be directed to: Lawrence Livermore National Laboratory Innovation and Partnerships Office P.O. Box 808, L-779 Livermore, CA 94551-0808 Attention: IL-13828

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