Top-Side Dry Etching of p-GaN Layer

The contract outlines a precise dry etching process to remove exactly 3 microns of p-GaN material from the top side of a substrate using an SiO₂ mask, with the goal of fully exposing the underlying 4H-SiC layer without inducing any trenching, etch undercut, or mechanical or thermal damage to the substrate. This process demands high precision in etch depth control and selectivity, ensuring the SiO₂ mask remains intact and the exposed 4H-SiC surface retains its structural and electrical integrity. The work is part of a subcontract under NASA Shared Services Center, administered by the National Aeronautics and Space Administration, and is classified under NAICS code 334413 for semiconductor and related device manufacturing. The solicitation was posted on July 6, 2026, with a strict response deadline of July 10, 2026, at 1:00 PM, indicating a tight timeline for proposals. The place of performance and point of contact information are not specified, suggesting the work may be performed at an approved contractor facility rather than a federal site. The contract does not include set-aside provisions, implying it is open to all eligible bidders. Successful responders must demonstrate proven capability in advanced semiconductor etching techniques, particularly with wide bandgap materials like p-GaN and 4H-SiC, and provide evidence of process control, contamination avoidance, and surface quality assurance to meet the stringent requirements of the task.