4H-SiC Single Crystal Wafer Supply
Contract Overview
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AI Contract Overview
This subcontract involves the supply of high-purity, single crystal 4H-SiC wafers to support prime contractors working on projects for the National Aeronautics and Space Administration at the Glenn Research Center in Cleveland. The scope of work requires the delivery of two 4-inch diameter wafers, each with a thickness of approximately 350 microns. To ensure compatibility with deep reactive ion etching processes, the materials must strictly adhere to specific purity and thickness requirements. The opportunity is categorized under NAICS code 325211 and was posted on October 13, 2026, with a response deadline of October 16, 2026.
General Info
Place of Performance
Cleveland, OH, 44135, USASet-Aside
Documents
This scope was carved out of 80NSSC27946811Q.
The full solicitation package (2 documents), including the RFP, is on the prime solicitation, not on this scope.
Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer
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