Dopant Selective Deep Reactive Ion Etching (DRIE) Services

This subcontract for the National Aeronautics and Space Administration involves providing high-precision dopant-selective deep reactive ion etching services for 4H-SiC wafers. The project supports prime contractors at the NASA Glenn Research Center in Cleveland, requiring the use of DRIE systems capable of semi-insulating SiC/n-type selectivity. The scope of work requires executing etching on 4-inch single crystal wafers to a depth of 320 microns to produce 30-micron thick diaphragms. The final deliverable consists of two etched 4-inch 4H-SiC wafers that must strictly adhere to all geometric and surface quality specifications.