A -- Carbon-Based Ultra-High Speed Electronics for Wafer-Scale Integration

Over the past decade there has been significant progress in understanding the fundamental physical properties of carbon based electronic devices. Carbon nanotube (CNT) transistors have been demonstrated with high mobilities (> 10X silicon), high thermal conductivity and excellent current carrying capabilities. In addition, there have been very encouraging initial electronic studies of the planar form of carbon; single layer graphene, which offers the intriguing potential of planar fabrication processes. The time is ripe for technological exploitation of these scientific discoveries for the benefit of the DoD. The desirable physical properties of carbon electronic systems are particularly well suited for ultra-high speed analog device applications. Key properties such as excellent electrostatic control for deeply scaled dimensions, high current carrying capabilities and excellent thermal conductivities are very desirable from the RF-mm wave technology point of view. To further explore advanced research for potential DoD applications, the Microsystems Technology Office is sponsoring a workshop for researchers to present and discuss their novel ideas for the future of carbon-based electronics. In this announcement, we are soliciting short white papers in the area of carbon electronics for RF-mm wave technology applications. The white papers most relevant to this solicitation will be selected for participation in the DARPA workshop on carbon-based ultra-high speed electronics. These papers should be no more than 3 pages in length (including figures and references) and briefly describe your problem statement, research goals, technical innovations, main challenges, and proposed approaches. Some areas of particular interest include methods for producing highly aligned CNTs and sorting of semiconducting from metallic CNTs. In the graphene field, methods of monolayer synthesis on insulating substrates as well as short channel transistor demonstrations are of particular interest. The CNT or Graphene devices proposed must have clear potential for revolutionary performance advantages with respect to current state-of-the-art RF technology. In addition, the carbon electronic devices proposed must be compatible with silicon process technology (for co-integration) and show clear potential for high performance complex circuit demonstrations. Please note that this workshop is not a formal solicitation for proposals or proposal abstracts. The workshop is planned for April 19-20, 2007 in Arlington, VA, and will be by invitation only. If you have innovative ideas to address the interested technical areas as mentioned above, please send your white paper to Kristina Wihl (contact@example.gov) by March 21, 2007. We will inform you of our decision by April 4, 2007. A website with further information on the workshop and for registration will be provided at that time. The government will not assume liability for costs incurred for travel expenses, presentations, marketing material, etc. If there are questions related to the technical content of the workshop, please contact Michael Fritze (contact@example.gov) who is the MTO Program Manager sponsoring this workshop.