This Government Contract opportunity from Department Of Commerce was posted on April 27, 2026. The submission period has ended. Browse the details below for market research, or find similar active opportunities.
Doped Silicon Epitaxial Wafer Manufacturing
Contract Overview
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The contract calls for the fabrication of thin doped silicon epitaxial layers with strict specifications for dopant type, concentration, and depth profiling, requiring advanced characterization techniques such as Secondary Ion Mass Spectrometry and Sheet Resistance Profiling to verify compliance. The work demands precise control over material properties to meet stringent technical requirements for semiconductor applications, ensuring uniformity and accuracy in the epitaxial structure. All deliverables must be validated through established metrology protocols to confirm conformance to defined dopant profiles. This is a total small business set-aside subcontract under the SBA program, designated for small business concerns, with a NAICS code of 334413 for semiconductor and related device manufacturing. The opportunity was posted on April 27, 2026, and responses are due by May 12, 2026, at 5:00 PM. The contracting entity is the National Institute of Standards and Technology under the Department of Commerce, though no specific place of performance or point of contact details are provided. All work must be executed by a qualified small business entity capable of meeting the technical and quality benchmarks outlined in the solicitation.
General Info
Agency
NAICS
Place of Performance
MDSet-Aside
Documents
This scope was carved out of 1333ND26QNB030152.
The full solicitation package (2 documents), including the RFP, is on the prime solicitation, not on this scope.
Silicon and Silicon/Germanium Epitaxial Wafers
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Timeline
Submission Closed
Organization & Contact Information
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