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Thermal Annealing Services

Active

Federal

Response Deadline08/17/2026, 08:00:00 PM UTC

Contract Overview

Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.

AI Contract Overview

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This subcontract for Thermal Annealing Services is issued by the National Aeronautics and Space Administration through the NASA Shared Services Center. The primary objective of the contract is to provide high-temperature processing necessary to activate dopants, enhance film adhesion, and relieve stress within fabricated SiC sensor layers. The opportunity is categorized under NAICS code 334419 and was posted on August 12, 2026, with a response deadline of August 17, 2026. This specialized technical service is critical for the structural and functional integrity of the sensor components being developed.

General Info

NASA subcontract for thermal annealing services to process SiC sensor layers.

Agency

National Aeronautics And Space Administration → NASA Shared Services CenterView Agency

NAICS

334419 - Other Electronic Component ManufacturingView NAICS

Place of Performance

MS

Set-Aside

NONE

Documents

This scope was carved out of 80NSSC26941665Q.

The full solicitation package (1 document), including the RFP, is on the prime solicitation, not on this scope.

View the prime solicitation

Surface Micromachining of Single Crystal Silicon Carbide Sensors

AI Contract Breakdown

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Timeline

PostedAug 12

subcontract

Response DeadlineAug 17

Submission deadline

Response Deadline

08/17/2026, 08:00:00 PM UTCin 4 days

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Organization & Contact Information

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AgencyNational Aeronautics And Space Administration → NASA Shared Services Center

ContactsNo contacts available

OfficeN/A

Organization / Agency

National Aeronautics And Space Administration → NASA Shared Services Center

View Agency Profile

Office AddressN/A

ContactsNo contact information available

Full Description

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High-temperature processing to activate dopants, improve film adhesion, and relieve stress in fabricated SiC sensor layers.

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