A -- Notice of intent to award sole source procurement for the development of Silicon Carbide (SiC) RF Power Transistors
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This contract involves the development and commercialization of Silicon Carbide (SiC) Static Induction Transistor (SIT) technology to support the upgrade of the E-2D Advanced Hawkeye AN/APS-145 radar and other critical Department of Defense radar and communication systems. With an estimated value of $1.6 million over a one-year period, the program aims to meet next-generation DoD requirements for high power amplifiers capable of delivering increased RF power output within a smaller form factor. This is facilitated by the advanced SiC semiconductor technology in vertical device structures, enabling high peak power performance across the required frequency range of 960-1215 MHz with broad bandwidths, surpassing the capabilities of current technology. Key technical objectives include establishing a qualified materials supply chain with at least two SiC substrate and epitaxial sources, developing capabilities for designing, fabricating, and testing SiC SITs, and operating a fabrication line for processing 100mm SiC substrates under an ISO certified quality system. Expertise is required in device design, modeling, fabrication, testing, assembly, packaging, and reliability testing. The program targets producing SiC SITs capable of delivering over 1000 watts of high pulsed power at UHF frequencies, fully qualified with Northrop-Grumman for production builds beginning in mid-2008. The government intends to award this contract as a sole-source procurement under FAR 6.302, seeking written expressions of interest that detail relevant experience, personnel qualifications, facilities, and other pertinent capabilities by February 6, 2007. The responses will guide the decision on whether to pursue competitive procurement, with key points of contact available for contractual and technical questions.
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