Epitaxial Growth of InGaAs Layers

The contract is for the epitaxial growth of InGaAs layers on InP substrates specifically engineered to achieve a 2.4-micron cutoff wavelength, with strict adherence to MRD-specified criteria for doping concentration, layer thickness, and defect density. The technology is intended for advanced optoelectronic applications requiring precise material properties, and the successful vendor must demonstrate capability in high-precision molecular beam epitaxy or metalorganic chemical vapor deposition techniques to meet these technical benchmarks. All materials and processes must comply with defense-grade quality standards to ensure performance reliability in operational environments. This is a total small business set-aside under the SBA program, classified under NAICS code 334413 for semiconductor and related device manufacturing, and issued by the U.S. Air Force’s Air Force Materiel Command, Air Force Research Laboratory, located at Wright Patterson AFB, Ohio. The opportunity was posted on July 21, 2026, with a firm deadline for responses on July 31, 2026, at 2:00 PM Eastern Time. As a subcontract opportunity, the awardee will likely work under a prime contractor serving the Department of Defense, and the place of performance is restricted to Wright Patterson AFB, though the specific logistical and reporting requirements beyond location remain undetailed in the provided data.