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Extreme High-Aspect-Ratio Fabrication Specialist

Active
SBIR / STTR

Contract Overview

Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.

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The Extreme High-Aspect-Ratio Fabrication Specialist subcontract supports DARPA SHIELDER projects by providing specialized deposition, patterning, and deep-etching of hard-mask materials. The scope of work involves executing scalable deposition and aggressive dry plasma etching to achieve 100:1 aspect ratios while maintaining strict critical dimension control and ensuring sidewall roughness remains below 2 nm RMS. Technical execution requires the use of DRIE systems alongside E-beam or photolithography tools to deliver high-precision fabricated wafers. This opportunity is a total small business set-aside under NAICS code 334413, specifically mandated for SBIR/STTR entities with fewer than 500 employees. To be eligible, contractors must adhere to cleanroom standards and maintain CMMC Level 1 certification. The response deadline for this Department of Defense requirement is October 21, 2026.

General Info

Small business subcontract for DARPA high-aspect-ratio wafer fabrication due October 21, 2026.

Documents

This scope was carved out of DPA26TZ06-DV004.

The full solicitation package (2 documents), including the RFP, is on the prime solicitation, not on this scope.

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Scalable Hard-mask materials with Improved Etch resistance and Low Degradation for Extreme-aspect-Ratio fabrication (SHIELDER)

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Organization & Contact Information

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AgencyDepartment of Defense → Defense Advanced Research Projects Agency
ContactsNo contacts available
OfficeN/A
Office AddressN/A
ContactsNo contact information available

Full Description

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Performs deposition, patterning, and deep-etching of hard-mask materials for prime contractors on DARPA SHIELDER projects. Executes scalable deposition and aggressive dry plasma etching to achieve 100:1 aspect ratios. Maintains critical dimension control and ensures sidewall roughness < 2 nm RMS. Utilizes DRIE systems and E-beam or photolithography tools. Requires CMMC Level 1 and cleanroom standards. Delivers fabricated wafers demonstrating 100:1 aspect ratios.

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