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Low-D Device and Full-Chip Prototype Demonstration

Active
Federal

Contract Overview

Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.

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This subcontract, titled Low-D Device and Full-Chip Prototype Demonstration, is issued by the National Science Foundation's Directorate For Technology, Innovation, & Partnerships. The project focuses on the design and fabrication of functional full-chip level prototypes for prime contractors on NSF ELEGANT projects. The primary objective is to achieve a 10X improvement in power, performance, area, and cost over standard CMOS nodes through device-circuit co-designs, variability-aware circuit sizing, and standard-cell characterization using advanced fabrication and testing equipment. The contract requires strict compliance with CHIPS Act restrictions and falls under NAICS code 334413. Interested parties must respond by December 18, 2026, to provide the required functional full-chip level prototypes.

General Info

NSF subcontract for high-performance full-chip prototypes via advanced device-circuit co-designs by December 2026.

NAICS

334413 - Semiconductor and Related Device Manufacturing

Place of Performance

1180, VA, USA

Set-Aside

NONE

Documents

This scope was carved out of NSF-OTASO-FY26-ELEGANT.

The full solicitation package (2 documents), including the RFP, is on the prime solicitation, not on this scope.

View the prime solicitation

NSF Ecosystem for Low-dimensional Electronics: Growth, Assembly, Nanoelectronics, and Translation (NSF ELEGANT)

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Organization & Contact Information

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AgencyNational Science Foundation → Directorate For Technology, Innovation, & Partnerships
ContactsNo contacts available
OfficeN/A
Office AddressN/A
ContactsNo contact information available

Full Description

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Designs and fabricates functional full-chip level prototypes for prime contractors on NSF ELEGANT projects. Performs device-circuit co-designs, variability-aware circuit sizing, and standard-cell characterization to demonstrate 10X PPAC improvement over CMOS nodes using advanced fabrication facilities and chip testing equipment. Must comply with CHIPS Act restrictions. Delivers functional full-chip level prototypes.

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