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CHIPS R&D: Atom Probe Tomography Chamber GCPN 2.04

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Federal

Contract Overview

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This procurement forecast, issued by the Department of Commerce's Office of the Director, supports the National Institute of Standards and Technology in advancing measurement science for the domestic semiconductor industry in alignment with the CHIPS for America Act. The Material Measurement Laboratory intends to acquire an Atom Probe Tomography Chamber to characterize materials and establish direct correlations between material processing, nanostructure, and resulting properties. The project will be performed in Boulder, Colorado, under NAICS code 334413. The primary objectives of this acquisition are to study the impact of laser wavelength on semiconductor materials to quantify measurement bias and uncertainty, thereby improving the accuracy and reproducibility of atom probe tomography measurements. Additionally, the instrument will be used to develop new measurement science through the three-dimensional atomic imaging of nanoscale samples. This effort is critical for enhancing the precision of semiconductor material characterization.

General Info

NIST seeks an Atom Probe Tomography Chamber for semiconductor material characterization in Colorado.

NAICS

334413 - Semiconductor and Related Device Manufacturing

Place of Performance

BOULDER, CO

Set-Aside

NONE

Documents

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Timeline

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Organization & Contact Information

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AgencyDepartment Of Commerce → Office of the Director
Contacts1 person available
OfficeN/A
Office AddressN/A
Contacts
NATHALI CLARK

Full Description

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In response to the CHIPS for America Act, this procurement supports NIST's mission to perform and develop the measurement science required by the domestic semiconductor industry. The Material Measurement Laboratory (MML) will use the instrument to characterization materials, allowing scientists to make direct correlations between material processing, (nano)structure, and resulting properties.A primary mission-critical focus of this acquisition is to:1) Study the effect of laser wavelength on semiconductor materials to characterize and quantify sources of measurement bias and uncertainty.2) Ameliorate these uncertainties to improve the accuracy, repeatability, and reproducibility of atom probe tomography (APT) measurements.3) Develop new measurement science through three-dimensional (3D) atomic imaging of nanoscale samples.

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