Contact Metallization for High-Temperature GaN Amplifiers

NASA/NSSC is seeking capability statements for the development of contact metallization for high-temperature GaN amplifiers capable of operating at 800°C for one hour in ambient air, with the goal of enabling amplifier fabrication based on published results in IEEE Electron Device Letters 46, 1309, 2025. This is a pre-solicitation notice, not a request for quotes, and no offers or pricing submissions are being accepted at this time. The solicitation number is 80NSSC26936838Q, posted on June 30, 2026, with a response deadline of July 2, 2026, at 4:00 p.m. Central Standard Time. All submissions must be in writing, must reference the solicitation number in the subject line, and oral communications are not permitted. The government intends to issue a sole source contract to The Pennsylvania State University under FAR 12.102(a), using non-commercial acquisition procedures prescribed in FAR Part 13. The performance location is NASA Glenn Research Center in Cleveland, Ohio, and successful respondents must deliver proven ohmic contact metallization processes on AlGaN/GaN with documented test results showing stable specific contact resistance under thermal stress for a minimum of one hour at 800°C in air, with full fabrication capability to be transferred to NASA within six months of purchase order issuance. The NAICS code is 611310, and the procuring organization is the NASA Shared Services Center with primary point of contact Lindsey McLellan. No packaging, inspection, delivery, or cost details are specified beyond the technical requirements outlined in the Statement of Work, and no evaluation factors are applicable since competitive bidding is not anticipated.