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Deferentially pumped focused x-ray source

Active
Federal

Contract Overview

Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.

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The Department of Commerce is seeking a differentially pumped focused x-ray source to support the development of a new plasma-XPS metrology platform. This initiative leverages expertise in plasma-surface interaction and operando photoelectron spectromicroscopy to enable quantitative, sub-monolayer sensitive chemical analysis of wafer surfaces, thin films, and interfaces in real time during plasma processing. The project aims to enhance semiconductor process development and inspection toolsets for next-node manufacturing while advancing the fundamental measurement science of plasma-surface interactions. The project will be performed in Gaithersburg and involves strategic collaborations between industrial partners and academia for the implementation and dissemination of the technology. This effort is categorized under NAICS code 334413 and is currently listed as a forecast. Primary points of contact for the procurement include Nathali Medina and the DOC OSDBU.

General Info

Department of Commerce seeks differentially pumped focused x-ray source for plasma-XPS metrology platform.

Agency

Department of Commerce

NAICS

334413 - Semiconductor and Related Device Manufacturing

Place of Performance

GAITHERSBURG, MD, USA

Set-Aside

NONE

Documents

0

No documents available

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Organization & Contact Information

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AgencyDepartment of Commerce
Contacts2 people available
OfficeN/A
Organization / Agency
Department of Commerce
Office AddressN/A
Contacts
NATHALI MEDINA
contact@example.gov
DOC OSDBU
contact@example.gov

Full Description

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Advanced in situ and operando methods for real time monitoring of the chemical status of wafer surfaces, thin films, and interfaces during plasma processing are essential for semiconductor process development and control. We will build upon NIST's leading expertise in plasma-surface interaction, plasma diagnostics, and operando photoelectron spectromicroscopy to develop a new plasma-XPS metrology platform for quantitative sub-monolayer sensitive in-situ chemical analysis of wafer surfaces during plasma processing. This innovative metrology will be a valuable addition to the next node semiconductor process development and inspection toolset and, in a broader scope, to the fundamental measurement science of plasma-surface interaction. We will collaborate with industrial partners (see letters of support) and academia in the development, implementation, and dissemination of plasma-XPS metrology. The data generated during this project and th

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