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Custom Diffractometry and Fourier Ptychography Endstation

Active
Federal

Contract Overview

Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.

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The Department of Commerce is seeking to acquire a customized diffractometry and Fourier ptychography end station to be located in Gaithersburg. This new experimental apparatus is designed to utilize short wavelength EUV light within a vacuum to perform non-destructive three-dimensional measurements of the smallest features and transistors on computer chips. The system will enable the accurate quantitative reconstruction of dimensional structures from reflective diffraction off samples under test. This procurement is a critical component of the CHIPS R&D Metrology Program, specifically supporting Grand Challenge 2 and project 2.07, EUV Scatterometry, to advance metrology for future microelectronics manufacturing. The project is categorized under NAICS code 334413 and was posted as a forecast on August 21, 2026.

General Info

Commerce seeks a customized EUV diffractometry station for microelectronics metrology in Gaithersburg.

Agency

Department of Commerce

NAICS

334413 - Semiconductor and Related Device Manufacturing

Place of Performance

GAITHERSBURG, MD, USA

Set-Aside

NONE

Documents

0

No documents available

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Organization & Contact Information

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AgencyDepartment of Commerce
Contacts2 people available
OfficeN/A
Organization / Agency
Department of Commerce
Office AddressN/A
Contacts
NATHALI CLARK
contact@example.gov
DOC OSDBU
contact@example.gov

Full Description

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The NDCD needs to acquire a customized diffractometry end station, which will be a new experimental apparatus that will harness short wavelength EUV light for the non-destructive three-dimensional measurement of the smallest features of computer chips, their transistors. This procurement supports the CHIPS R&D Metrology Program's Grand Challenge 2 to advance metrology for future microelectronics manufacturing and project 2.07, “EUV Scatterometry.” The application of the required end station is the accurate quantitative reconstruction of dimensional structure of periodic and other patterned features from the reflective diffraction off a sample under test using EUV light, which will only propagate in a vacuum.

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