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Xray Hardware Pkg

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Federal

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The Xray Hardware Pkg forecast, issued by the Department of Commerce, focuses on addressing critical measurement gaps in the semiconductor industry to enable smaller features and increased yield. The project aims to investigate how extreme ultraviolet lithography and new photoresist chemistries affect chemical heterogeneities and patterning quality at nanoscale dimensions. By studying the underlying mechanisms of EUV exposure and its spatial extent, the NIST team intends to better understand the relationship between resist chemistry and structural integrity. To achieve these goals, the initiative will involve the development of a specialized suite of metrology techniques designed to characterize advanced lithographic materials and measure chemical distributions in situ. The work will be performed in Gaithersburg under NAICS code 334413. Interested parties can coordinate with the designated point of contact, Nathali Medina, or the DOC OSDBU for further information regarding this technical effort.

General Info

NIST project developing metrology techniques for semiconductor EUV lithography and photoresist chemistry analysis.

Agency

Department of Commerce

NAICS

334413 - Semiconductor and Related Device Manufacturing

Place of Performance

GAITHERSBURG, MD, USA

Set-Aside

NONE

Documents

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Timeline

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forecast

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Organization & Contact Information

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AgencyDepartment of Commerce
Contacts2 people available
OfficeN/A
Organization / Agency
Department of Commerce
Office AddressN/A
Contacts

Full Description

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The semiconductor industry continues to push for smaller features, more integration, and increased yield. New photoresist chemistries and advances in extreme ultraviolet lithography are enabling this trend. However, this is inhibited by a lack of measurements describing heterogeneities in chemistry that contribute to the quality of photoresist patterns at these smaller dimensions. This includes fundamental questions into how the EUV exposure changes the resist chemistry and its spatial extent, and the underlying mechanisms that produce those changes. Our proposed NIST team will characterize the properties of advanced lithographic materials, measure nanoscale chemical distributions, and study the patterning process in situ. This will be accomplished by further developing a suite of metrology techniques which have tailored sensitivity to both the chemistry and structure of the photoresists and how the exposure processes influence critical

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