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Process development for APSM sets of overlay wafers

Active
Federal

Contract Overview

Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.

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The Department of Commerce is forecasting a project titled Process development for APSM sets of overlay wafers to address critical challenges in integrated circuit production. The initiative focuses on improving the measurement of 3D size, shape, and placement of structures with atomic-level precision, specifically targeting the limitations of current scanning electron microscope overlay measurements caused by complex structures and low signal intensities. The project aims to replace arbitrary measurement methods with a scientific foundation utilizing artificial intelligence, physics-based simulation, and modeling to optimize overlay patterns and image analysis. This effort is designed to meet current and future IRDS requirements and will be performed in Gaithersburg, under NAICS code 334413.

General Info

Commerce project using AI and physics to improve integrated circuit overlay wafer measurements.

Agency

Department of Commerce

NAICS

334413 - Semiconductor and Related Device Manufacturing

Place of Performance

GAITHERSBURG, MD, USA

Set-Aside

NONE

Documents

0

No documents available

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Organization & Contact Information

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AgencyDepartment of Commerce
Contacts2 people available
OfficeN/A
Organization / Agency
Department of Commerce
Office AddressN/A
Contacts
NATHALI MEDINA
contact@example.gov
DOC OSDBU
contact@example.gov

Full Description

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IC production relies on measurements of the 3D size, shape, and placement of structures with atomic-level precision and repeatability. As the IRDS identified, SEM overlay measurements are already problematic due to complex 3D structures, material variety, and low signal intensities. This project will create a sound scientific foundation and comprehensive solutions for overlay and any SEM dimensional metrology superior to currently used arbitrary methods. This will allow the design of overlay patterns, acquisition, and image analysis to be optimized entirely through artificial intelligence, physics-based simulation, and modeling and meet IRDS requirements now and in the future.

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