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Custom Wafer Services

Active
Federal

Contract Overview

Solicitation details, issuing organization, response deadlines, documents, and interested companies for this government contract opportunity.

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The Department of Commerce is forecasting a requirement for Custom Wafer Services to address critical metrology challenges associated with mechanical strain in nanoscale semiconductor devices. Because strain significantly impacts device performance and manufacturing yields, the initiative focuses on advancing measurement techniques such as EBSD, TKD, 4-D STEM, Raman, and micro-XRD. The goal is to improve measurement accuracy and develop new reference materials to support the production of future-generation devices with increasing geometric complexity. This effort is managed under NAICS code 334413 and will be performed in Gaithersburg. Interested parties can coordinate with the point of contact, Nathali Medina, or the DOC Office of Small and Disadvantaged Business Utilization for further information regarding this forecast.

General Info

Department of Commerce seeks custom wafer services for nanoscale semiconductor strain metrology measurements.

Agency

Department of Commerce

NAICS

334413 - Semiconductor and Related Device Manufacturing

Place of Performance

GAITHERSBURG, MD, USA

Set-Aside

NONE

Documents

0

No documents available

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Organization & Contact Information

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AgencyDepartment of Commerce
Contacts2 people available
OfficeN/A
Organization / Agency
Department of Commerce
Office AddressN/A
Contacts
NATHALI MEDINA
contact@example.gov
DOC OSDBU
contact@example.gov

Full Description

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Mechanical strain impacts the performance of semiconductor devices. Manufacturing processes must be carefully controlled for strain to achieve high yielding and high-performance products. However, measuring strain in nanoscale devices remains a metrology challenge for manufacturers. Different techniques (EBSD, TKD, 4-D STEM, Raman, µXRD, etc.) are either commercially available or under development to address this need, with NIST making significant contributions to these methods. As geometric complexity and importance of strain continues to increase, we intend to continue advancing these techniques, improving their accuracy, and supply new reference materials to ensure capabilities for future-generation devices.

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